Metal halide perovskites have gained significant attention as a hopeful research area for developing perovskite light-emitting diodes. Achieving high-quality and cost-effective perovskite light-emitting diodes is crucial for their commercialization. This report focuses on an effective postprocessing approach that enhances the performance of perovskite emissive thin films without the need for vacuum equipment. By employing annealing and plasma treatment, the method successfully reduces grain size, and increases photoluminescence quantum yield, carrier recombination rate, external quantum efficiency (∼20.5 %), and luminance (∼68000 cd/m²) of the perovskite emitters (MAPbBr₃). The proposed technique offers a time-efficient and economical solution for fabricating efficient commercial devices.

金属卤化物钙钛矿作为开发钙钛矿发光二极管的一个有希望的研究领域受到了极大的关注。实现高质量且具有成本效益的钙钛矿发光二极管对其商业化至关重要。本报告重点介绍一种有效的后处理方法，无需真空设备即可增强钙钛矿发射薄膜的性能。通过采用退火和等离子体处理，该方法成功地减小了钙钛矿发射体（MAPbBr ₃）的晶粒尺寸，并提高了光致发光量子产率、载流子复合率、外量子效率（∼20.5%）和亮度（∼68000cd/m 2 ）^。）。所提出的技术为制造高效的商业设备提供了一种省时且经济的解决方案。