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Effect of mixed surface terminations on the work function and quantum capacitance of Sc2CT2 monolayer
Surface Science ( IF 1.9 ) Pub Date : 2023-10-26 , DOI: 10.1016/j.susc.2023.122413
Chang-Chang Cui , Si-Fan Yu , Xiao-Hong Li , Rui-Zhou Zhang , Hong-Ling Cui

MXenes are two-dimensional transition metal carbides and nitrides, which are promising for supercapacitor applications. The surface of MXenes is usually covered by a mixture of O, OH, and F groups during etching. The effect of mixed termination on the quantum capacitance and work function (WF) of MXenes is investigated by first principles calculation. The WFs of Sc2C(OH)2-R are smaller than those of Sc2CO2-R and Sc2CF2-R when the OH ratio is larger than about 27 %. The quantum capacitances of Sc2C MXenes with different ratio of F, O, and OH groups (named as Sc2CF2-R, Sc2CO2-R, Sc2C(OH)2-R) are explored to predict the electrode type of materials. Negative binding energies confirm the stability of the studied mixed systems. The increasing ratio of O group can make the system have decreased TDOS near Fermi level, thus decreasing quantum capacitance. The top quantum capacitance of Sc2CO2-R and Sc2C(OH)2-R systems at negative bias increase with the increasing ratio of O/OH group. All systems have larger storage charge at negative potential, and are all potential cathode materials, especially for Sc2CO2-R and Sc2CF2-R MXene with much smaller |Qa|/|Qc| than 1 and larger Cc. The quantum capacitance under wide voltage is also considered.



中文翻译:

混合表面终端对Sc2CT2单层功函数和量子电容的影响

MXenes 是二维过渡金属碳化物和氮化物,在超级电容器应用中具有广阔的前景。在蚀刻过程中,MXenes 的表面通常被 O、OH 和 F 基团的混合物覆盖。通过第一原理计算研究了混合终止对 MXene 的量子电容和功函数 (WF) 的影响。当OH比率大于约27%时, Sc 2 C(OH) 2 -R的WF小于Sc 2 CO 2 -R和Sc 2 CF 2 -R的WF。研究了具有不同F、O和OH基团比例的Sc 2 C MXenes(命名为Sc 2 CF 2 -R、Sc 2 CO 2 -R、Sc 2 C(OH) 2 -R)的量子电容,以预测电极材料的类型。负结合能证实了所研究的混合系统的稳定性。O基团比例的增加可以使体系的TDOS降低到费米能级附近,从而降低量子电容。负偏压下Sc 2 CO 2 -R和Sc 2 C(OH) 2 -R体系的顶部量子电容随着O/OH基团比例的增加而增加。所有体系在负电位下都具有较大的存储电荷,并且都是潜在的正极材料,特别是对于|Q a |/|Q c |小得多的Sc 2 CO 2 -R和Sc 2 CF 2 -R MXene。大于1且更大的C c。还考虑了宽电压下的量子电容。

更新日期:2023-10-29
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