The application of the barrier architecture exhibits the potential in reducing the noise current and improving the performance of photodetectors. However, the development of mid-infrared InSb barrier detector is lagging far behind its III-V counterparts due to the problem of lattice mismatch. In this paper, we proposed two InSb barrier detectors that have reduced dark current and raised operating temperatures with the help of commercial software APSYS platform. The incorporation of a In0.72 Al0.28Sb barrier architecture to the InSb absorber offers a significant dark current reduction over the conventional InSb photodiode, regardless the presence of strain-induced defects within the barrier layers. At 150 K, the InSb bulk barrier detector has a cutoff wavelength at $5.65 \mu \text{m}$ . With a barrier design, the dark current, $9.96\times 10^{-3}\text{A}$ /cm2 at −220 mV, is about 77 times lower than the InSb photodiode and the specific detectivity is about $2.07\times 10 ^{11}$ cm Hz $^{1/2}$ /W with a–220 mV bias voltage, which brings approximately an order of magnitude of performance improvement.

中文翻译：

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扩展中波红外高工作温度 InSb pBn 光电探测器的理论模拟

势垒结构的应用展现了降低噪声电流和提高光电探测器性能的潜力。然而，由于晶格失配的问题，中红外InSb势垒探测器的发展远远落后于III-V族探测器。在本文中，我们提出了两种InSb势垒探测器，它们借助商业软件APSYS平台减少了暗电流并提高了工作温度。将 In0.72 Al0.28Sb 势垒结构融入 InSb 吸收器中，与传统 InSb 光电二极管相比，无论势垒层内是否存在应变引起的缺陷，都能显着减少暗电流。在 150 K 时，InSb 体势垒探测器的截止波长为 $5.65 \mu \text{m}$ 。采用势垒设计，暗电流， $9.96\times 10^{-3}\text{A}$ /cm2 在-220 mV 时，比 InSb 光电二极管低约 77 倍，比探测率约为 $2.07\乘以 10 ^{11}$厘米赫兹 $^{1/2}$ /W 具有–220 mV 偏置电压，这带来了大约一个数量级的性能提升。