This study investigates several ways to improve the quality factor and (or) the inductance by evaluating the possibility to add magnetic materials around an inductor integrated into the BEOL of CMOS technology. Performance boost evaluation is done through 3D numerical simulations of an inductor integrated on an SOI substrate made in a 28 nm UTBB FDSOI technology. The choice of materials and their design topologies are mainly the study parameters which leads to the selection of a solution according to the final application: RF for quantum. We demonstrate an ideal improvement of L by a factor 5 and of Q by a factor 3, and a realistic improvement of Q of 2-turn inductors by 25 % with a shield; 46 % with a patterned magnetic material; and a Q improvement of 1-turn inductor by 14 % with an HR substrate.

本研究通过评估在集成到 CMOS 技术 BEOL 的电感器周围添加磁性材料的可能性，研究了提高品质因数和（或）电感的几种方法。性能提升评估是通过对集成在采用 28 nm UTBB FDSOI 技术制成的 SOI 基板上的电感器进行 3D 数值模拟来完成的。材料的选择及其设计拓扑主要是研究参数，这些参数导致根据最终应用选择解决方案：量子射频。我们展示了理想情况下 L 提高了 5 倍，Q 提高了 3 倍，并且带屏蔽的 2 匝电感器的 Q 实际提高了 25%；46%带有图案磁性材料；采用 HR 基板的 1 匝电感器的 Q 值提高了 14%。