The Vertical Bridgman (VB) method plays a vital role in growing crystals of Group II-VI semiconductors, oxides, and fluorides. However, achieving large-scale crystals with high quality remains challenging due to the complexities of heat-mass transfer and phase change phenomena involved in the process. To enhance the understanding and control of the VB crystal growth, this paper reviews previous numerical simulation studies on optimizing and controlling the melt-crystal interface, flow, and stress during the growth process, as these factors strongly influence the generation and distribution of defects. The shape of the melt-crystal interface significantly impacts the propagation of grains and inclusions, and a desirable interface can be achieved by enhancing axial heat flux or suppressing radial heat dissipation at the interface. Effective control of melt flow ensures uniform solute distribution, and strategies like suppressing natural convection or introducing forced convection techniques are prove beneficial. Stress plays a pivotal role in dislocation movement and interaction, potentially leading to low angle grain boundaries and cracks. Stress control methods focus on minimizing deformation sources, including temperature, concentration, and mechanical contact. The paper provides detailed explanations of interface, flow, and stress control methods, offering valuable insights for researchers aiming to grow large-scale, high-quality crystals with enhanced efficiency. Furthermore, the control mechanisms and methods discussed in this review may also be applicable to other melt crystal growth techniques.

垂直布里奇曼 (VB) 方法在生长 II-VI 族半导体、氧化物和氟化物晶体中发挥着至关重要的作用。然而，由于过程中涉及的热质传递和相变现象的复杂性，实现高质量的大尺寸晶体仍然具有挑战性。为了增强对VB晶体生长的理解和控制，本文回顾了先前关于优化和控制生长过程中熔体-晶体界面、流动和应力的数值模拟研究，因为这些因素强烈影响缺陷的产生和分布。熔体-晶体界面的形状显着影响晶粒和夹杂物的扩展，并且可以通过增强界面处的轴向热通量或抑制径向散热来实现理想的界面。熔体流动的有效控制可确保溶质分布均匀，抑制自然对流或引入强制对流技术等策略被证明是有益的。应力在位错运动和相互作用中起着关键作用，可能导致小角度晶界和裂纹。应力控制方法侧重于最大限度地减少变形源，包括温度、浓度和机械接触。该论文详细解释了界面、流动和应力控制方法，为旨在提高效率地生长大规模、高质量晶体的研究人员提供了宝贵的见解。此外，本综述中讨论的控制机制和方法也可能适用于其他熔融晶体生长技术。