We report high gain avalanche photodetectors operating in the deep UV wavelength regime. The high gain was leveraged through reduced area epitaxy by patterning AlN on Sapphire substrate. This helps in a substantial reduction of crack formation due to overgrowth on individually isolated AlN mesas. Reproducible gain on the order of 105 was reported for multiple diodes in different areas of $320\times 256$ focal plane array.

中文翻译：

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使用缩小面积外延的日盲深紫外雪崩光电探测器

我们报告了在深紫外波长范围内工作的高增益雪崩光电探测器。通过在蓝宝石衬底上对 AlN 进行图案化，通过缩小面积外延来实现高增益。这有助于大幅减少由于单独隔离的 AlN 台面过度生长而导致的裂纹形成。据报道，不同区域的多个二极管的可重复增益约为 105 $320\乘256$焦平面阵列。