Effects of metal work function and gate-Oxide dielectric on super high frequency Performance of a non-align junction DG-MOSFET based inverter in the sub-100 nm regime: a TCAD simulation Analysis,International Journal of Electronics

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Effects of metal work function and gate-Oxide dielectric on super high frequency Performance of a non-align junction DG-MOSFET based inverter in the sub-100 nm regime: a TCAD simulation Analysis
International Journal of Electronics ( IF 1.3 ) Pub Date : 2023-11-05 , DOI: 10.1080/00207217.2023.2278435
Banoth Vasu Naik ₁ , Arun Kumar Sinha ₁

Affiliation

This paper presents simulation analysis of an inverter made from non-aligned double gate field effect transistors (NADGFETs) in Sub-100 nm regime. The inverter consists of n-channel NADGFET and p-c...

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