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High-Speed, Low-Power, and Area-Efficient 5T4M Memristor-Based Ternary Content Addressable Memory
IETE Technical Review ( IF 2.4 ) Pub Date : 2023-11-16 , DOI: 10.1080/02564602.2023.2279155
Md Hasan Maruf 1 , Syed Iftekhar Ali 2
Affiliation  

Researchers are currently emphasizing the development of memory design based on memristors as a solution to the challenges posed by MOSFET-based designs. In this paper, a memristor-based ternary co...

中文翻译:

高速、低功耗、面积高效的 5T4M 基于忆阻器的三态内容可寻址存储器

研究人员目前强调开发基于忆阻器的存储器设计,作为应对基于 MOSFET 的设计所带来的挑战的解决方案。在本文中,基于忆阻器的三元器件...
更新日期:2023-11-16
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