Metal–organic frameworks (MOFs) have recently emerged as a new class of scalable and low energy consumptive materials for microelectronic applications. Here, we experimentally extend the list of MOFs with memristive behavior for electronic data storage. Using 15 µm single crystals of UiO-66 located in 10 µm gap between Au contacts, we demonstrate an electronic set/reset process upon 15 kV cm of an electric field strength under normal conditions. Such low-energy data recording together with an endurance of more than 7 cycles for set/reset opens up prospects for the design of MOF-based electronic and opto-electronic devices.

中文翻译：

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UiO-66金属有机骨架单晶的忆阻行为

金属有机框架（MOF）最近成为一种用于微电子应用的新型可扩展且低能耗的材料。在这里，我们实验性地扩展了具有忆阻行为的 MOF 列表，用于电子数据存储。使用位于 Au 触点之间 10 µm 间隙中的 15 µm UiO-66 单晶，我们演示了正常条件下 15 kV cm 电场强度下的电子设置/重置过程。这种低能量的数据记录以及超过 7 个周期的设置/重置耐久性为基于 MOF 的电子和光电器件的设计开辟了前景。