Using InSb/GaSb semiconductor quantum dots, we demonstrate the lateral spatial resolution of scattering apertureless near-field microscope equal to 10 – 15 nm at a wavelength of λ = 10.7 μm provided by a single-mode CO₂ laser. The measurement conditions make it possible to undoubtedly exclude any artifacts caused by the sample topography and other similar factors. We identify the strongly localized in-plane near-field signal with a two-dimensional electron gas clamped on the InSb/GaSb interface of quantum dots.

中文翻译：

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横向分辨率为 10 – 15 nm 的无孔径扫描近场光学显微镜探头观察半导体结构

使用 InSb/GaSb 半导体量子点，我们证明了散射无孔近场显微镜在波长 λ = 10 时的横向空间分辨率等于 10 – 15 nm 。由单模CO ₂激光器提供7μm。测量条件无疑可以排除由样品形貌和其他类似因素引起的任何伪影。我们通过夹在量子点的 InSb/GaSb 界面上的二维电子气来识别强局域化的面内近场信号。