We investigate the frictional torque acting on a nanoparticle rotating near graphene-covered SiC nanowires. The physical mechanisms for the enhancement of the frictional torque acting on the nanoparticle are analyzed in detail. We find that the frictional torque is intensively dependent on the rotation frequency of the nanoparticle, the filling factor of SiC nanowires, and the chemical potential of graphene. Several peaks appear in the frictional torque curve as the rotation frequency of the nanoparticle increases. When the rotation frequency is small, the frictional torque increases linearly with the rotation frequency. While the relationship between frictional torque and rotation frequency is complex when the rotation frequency becomes large. The frictional torque increases as the chemical potential increases at a low rotation frequency. However, at high rotation frequency, the frictional torque increases quickly as the chemical potential increases, while it will decrease as the chemical potential continues to increase after reaching the maximum value. The results obtained in this work are meaningful for understanding the Casimir friction.

Graphical abstract

The relationship between the frictional torque and the rotation frequency of nanoparticle near different configurations. The frictional torque increases linearly with rotation frequency when it is small, while the relationship between frictional torque and rotation frequency is complex when it is large. The chemical potential of graphene is set to \(\mu =0.1\) eV and the filling factor of SiC nanowires is set to \(f=0.5\).

中文翻译：

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石墨烯覆盖的 SiC 纳米线附近纳米颗粒摩擦扭矩的调节

我们研究了作用在石墨烯覆盖的碳化硅纳米线附近旋转的纳米粒子上的摩擦扭矩。详细分析了作用在纳米粒子上的摩擦扭矩增强的物理机制。我们发现摩擦扭矩很大程度上取决于纳米粒子的旋转频率、SiC 纳米线的填充因子和石墨烯的化学势。随着纳米颗粒旋转频率的增加，摩擦扭矩曲线中出现几个峰值。当旋转频率较小时，摩擦扭矩随旋转频率线性增加。而当旋转频率变大时，摩擦扭矩与旋转频率之间的关系变得复杂。在低旋转频率下，摩擦扭矩随着化学势的增加而增加。然而，在高转速下，摩擦扭矩随着化学势的增加而迅速增加，而在达到最大值后，随着化学势的继续增加，摩擦扭矩会减小。这项工作获得的结果对于理解卡西米尔摩擦具有重要意义。

图形概要

不同构型附近纳米粒子的摩擦力矩与旋转频率的关系。当摩擦扭矩较小时，摩擦扭矩随旋转频率线性增加，而当摩擦扭矩较大时，摩擦扭矩与旋转频率之间的关系很复杂。石墨烯的化学势设置为\(\mu =0.1\) eV，SiC 纳米线的填充因子设置为\(f=0.5\)。