We fabricate a nanocomposite (NC) of polycarbonate (PC), Zinc sulfide (ZnS) and Nickel oxide (NiO) nanoparticle by the sol-gel and ex-situ casting processes. We trust that this study is novel in the area of the impact of laser on such NC. The Rietveld alteration of XRD records indicates that both the prepared ZnS and NiO have a nano-nature of an average particle size of 4 and 18 nm. Samples of the PC/ZnS-NiO NC films are exposed to numerous laser fluences (4 – 30 J/cm²). We investigate the resulting outcome of the laser exposure on the optical behavior of the NC films, using ultraviolet spectroscopy (UVs). Upon raising the fluence up to 30 J/cm², both the indirect and direct band gaps reduce. The Urbach energy exhibits a reverse trend. This can be attributable to the domination of chain crosslinks. Also, we detect the nature of microelectronic transitions, using the optical dielectric loss εʺ and find that the PC/ZnS-NiO NC films possess direct allowed transitions. Also, we study the laser induced modifications in the optical conductivity and dielectric parameters. Moreover, the optical coloration changes between the exposed samples and pristine are estimated. The pristine NC sample is uncolored. It shows significant color alterations upon the laser exposure. The induced improvements in the optical characters suggest that the laser is a convenient mean that permits the use of PC/ZnS-NiO NC in the optoelectronic devices.

我们通过溶胶-凝胶和异位铸造工艺制造了聚碳酸酯（PC）、硫化锌（ZnS）和氧化镍（NiO）纳米粒子的纳米复合材料（NC）。我们相信这项研究在激光对此类数控系统的影响方面是新颖的。Rietveld 对 XRD 记录的修改表明，所制备的 ZnS 和 NiO 均具有平均粒径为 4 和 18 nm 的纳米性质。PC/ZnS-NiO NC 薄膜样品暴露于多种激光能量密度 (4 – 30 J/cm ² ) 下。我们使用紫外光谱 (UV) 研究激光曝光对 NC 薄膜光学行为的影响。当能量密度提高到30 J/cm ²时，间接带隙和直接带隙都会减小。乌尔巴赫能量呈现出相反的趋势。这可归因于链交联的主导。此外，我们利用光学介电损耗εʺ检测微电子跃迁的性质，并发现 PC/ZnS-NiO NC 薄膜具有直接允许的跃迁。此外，我们还研究了激光诱导的光导率和介电参数的改变。此外，还估计了曝光样品和原始样品之间的光学着色变化。原始的 NC 样品是未着色的。它在激光照射下显示出显着的颜色变化。光学特性的改善表明激光是一种方便的手段，允许在光电器件中使用 PC/ZnS-NiO NC。