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A novel topology with controllable wideband baseband impedance for power amplifiers
Frontiers of Information Technology & Electronic Engineering ( IF 3 ) Pub Date : 2023-12-07 , DOI: 10.1631/fitee.2300074
Yao Yao , Zhijiang Dai , Mingyu Li

This paper presents a novel topology to control the baseband impedance of a power amplifier (PA) to avoid performance deterioration in concurrent dual-band mode. This topology can avoid pure resonance of capacitors and inductors LC, which leads to a high impedance at some frequency points. Consequently, it can be applied to transmitters that are excited by broadband signals. In particular, by adjusting the circuit parameters and increasing stages, the impedance of the key frequency bands can be flexibly controlled. A PA is designed to support this design idea. Its saturated output power is around 46.7 dBm, and the drain efficiency is >68.2% (1.8–2.3 GHz). Under concurrent two-tone excitation, the drain efficiency reaches around 40% even under 5.5 dB back-off power with the tone spacing from 10 MHz to 500 MHz. These results demonstrate that the proposed topology is capable of controlling wideband baseband impedance.



中文翻译:

一种用于功率放大器的具有可控宽带基带阻抗的新颖拓扑

本文提出了一种新颖的拓扑来控制功率放大器 (PA) 的基带阻抗,以避免并发双频模式下的性能恶化。这种拓扑可以避免电容和电感LC的纯谐振,从而导致在某些频率点出现高阻抗。因此,它可以应用于由宽带信号激励的发射机。特别是通过调整电路参数、增加级数,可以灵活控制关键频段的阻抗。PA 就是为了支持这一设计理念而设计的。其饱和输出功率约为 46.7 dBm,漏极效率 >68.2% (1.8–2.3 GHz)。在同时双音激励下,即使在 5.5 dB 回退功率下,音调间隔从 10 MHz 到 500 MHz,漏极效率也能达到 40% 左右。这些结果表明所提出的拓扑能够控制宽带基带阻抗。

更新日期:2023-12-07
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