This research explores the impact of varying aluminum cathode film thickness on the structure and performance of organic light-emitting diodes (OLEDs) with a Glass/ITO/PEDOT:PSS/Alq₃ structure. The aluminum film thicknesses studied were 60, 80, and 100 nm. The structure of the aluminum films was analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and atomic force microscopy (AFM). Results from the structural characterization revealed that Al films with thicknesses of 60 and 80 nm had a polycrystalline structure consistent with the cubic phase of aluminum, with peak in the (111) plane direction. Additionally, an increase in thickness led to an increase in surface roughness. Current–voltage characterization of the diodes indicated their diode behavior, and it was found that increasing cathode thickness decreases the operating voltage of the diodes. Light emission spectroscopy of the diodes showed that increasing cathode thickness enhances the intensity of emitted light, but does not alter the wavelength of the emitted light.

_{本研究探讨了不同铝阴极膜厚度对 Glass/ITO/PEDOT:PSS/Alq 3}结构有机发光二极管 (OLED) 结构和性能的影响。研究的铝膜厚度为 60、80 和 100 nm。使用 X 射线衍射 (XRD)、场发射扫描电子显微镜 (FESEM) 和原子力显微镜 (AFM) 分析铝膜的结构。结构表征结果表明，厚度为60和80 nm的Al薄膜具有与铝立方相一致的多晶结构，峰位于（111）面方向。此外，厚度的增加导致表面粗糙度的增加。二极管的电流-电压特性表明了它们的二极管行为，并且发现增加阴极厚度会降低二极管的工作电压。二极管的光发射光谱表明，增加阴极厚度会增强发射光的强度，但不会改变发射光的波长。