A considerable number of investigations have been carried out to date on the optical orientation of electrons in semiconductors [1–6]. In most cases, the effectiveness of the orientation was determined principally by the spin relaxation of the electrons at the bottom of the conduction band. We show in the present paper that the degree of stationary orientation of the non-equilibrium electrons can be determined to a considerable degree (depending on the impurity concentration) by the spin relaxation occurring upon thermalization of the “hot” electrons produced by the light.

中文翻译：

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“热”电子的自旋弛豫对半导体光学取向有效性的影响

迄今为止，已经对半导体中电子的光学取向进行了大量的研究[1-6]。在大多数情况下，取向的有效性主要由导带底部电子的自旋弛豫决定。我们在本文中表明，非平衡电子的静止取向程度可以在很大程度上（取决于杂质浓度）由光产生的“热”电子热化时发生的自旋弛豫决定。