Atmospheric-pressure plasma-enhanced film deposition with single-filament dielectric-barrier discharges (DBDs) in argon was investigated using allyltrimethylsilane (ATMS) as a precursor. Nonionic deposition in the discharge zone is largely precluded by a rapid cross-flow of the source gas, containing between 50 and 2000 ppm of ATMS. The performed experimental studies show a surprisingly large deposited film mass per transferred elementary charge between 220 and 540 amu. Film growth experiments, mass-spectrometric studies, and kinetic considerations led to the conclusion that the deposition process is a cationic surface polymerization, initiated by ions produced in the DBD by energy transfer from long-lived excited Ar species and propagated by addition of ATMS monomer molecules.

中文翻译：

---

单丝介电势垒放电烯丙基三甲基硅烷的等离子体聚合——阳离子表面过程的证据

使用烯丙基三甲基硅烷 (ATMS) 作为前驱体，研究了氩气中单丝介质阻挡放电 (DBD) 的大气压等离子体增强薄膜沉积。含有 50 至 2000 ppm ATMS 的源气体的快速交叉流很大程度上阻止了放电区域中的非离子沉积。进行的实验研究表明，每个转移的基本电荷的沉积薄膜质量惊人地大，在 220 到 540 amu 之间。薄膜生长实验、质谱研究和动力学考虑得出的结论是，沉积过程是阳离子表面聚合，由长寿命激发 Ar 物种的能量转移在 DBD 中产生的离子引发，并通过添加 ATMS 单体进行传播分子。