Two-dimensional (2D) cesium lead halide (CsPbBr₃) nanoflakes have attracted significant attention due to their exceptional optoelectronic properties. Herein, the direct chemical vapor deposition (CVD) method was employed to synthesize high-quality single-crystalline 2D CsPbBr₃ flakes on a sapphire substrate using PbBr₂ and CsBr precursors. The study offers a comprehensive analysis of the reaction mechanisms involved, including precursor vaporization, transport, decomposition, and subsequent reactions. These factors play a crucial role in modifying the growth process and achieving the desired properties of CsPbBr₃ flakes on the sapphire substrate. Additionally, a detailed investigation was conducted into the position-dependent and power-dependent photoluminescence (PL) properties of CsPbBr₃ flakes on sapphire substrates. The results of this study contribute to the expanding knowledge base regarding the growth of 2D perovskite materials. Moreover, they open up avenues for future research and development in the field of advanced optoelectronics.

二维（2D）铯铅卤化物（CsPbBr ₃）纳米片由于其优异的光电特性而引起了广泛的关注。_{在此，采用直接化学气相沉积（CVD）方法，使用PbBr 2}和CsBr前驱体在蓝宝石衬底上合成高质量的单晶2D CsPbBr ₃薄片。该研究对所涉及的反应机制进行了全面分析，包括前体蒸发、传输、分解和后续反应。这些因素对于改变生长过程以及在蓝宝石基板上实现 CsPbBr _{3薄片的所需性能起着至关重要的作用。}此外，还对蓝宝石基板上CsPbBr ₃薄片的位置依赖性和功率依赖性光致发光 (PL) 特性进行了详细研究。这项研究的结果有助于扩大有关二维钙钛矿材料生长的知识库。此外，它们还为先进光电子领域的未来研究和开发开辟了途径。