Metal–organic frameworks (MOFs) have recently emerged as a new class of functional materials for opto- and micro-electronic applications. Herein, the transition from laboratory samples of devices to their prototypes remains a challenge. Here we report a prototype of memristive device based on MOF (HKUST-1). The MOF thin film with a thickness of 130 nm and a size of 1 × 1 in. has been fabricated Layer-by-layer technique on a conductive substrate followed by the deposition of top Ag contacts. A fully automated process of applying voltage to write the binary data (at 0.8 ± 0.1 V), read it (by 0.4 V) and then erase (by inverted polarity with 0.4 ± 0.1 V) made it potentially possible to process arbitrary words for at least 10 cycles. The provided prototype, consisting of 10 × 10 memory cells, opens up prospects for real-life application of MOF-based logic elements, as well as reveals the challenges for their fabrication and exploitation.

中文翻译：

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用于自动电子数据记录的 10×10 存储单元 MOF 薄膜忆阻器原型

金属有机框架（MOF）最近成为一类用于光电和微电子应用的新型功能材料。在此，从设备的实验室样品到原型的转变仍然是一个挑战。在这里，我们报告了一种基于 MOF 的忆阻器件原型（HKUST-1）。厚度为 130 nm、尺寸为 1 × 1 英寸的 MOF 薄膜采用逐层技术在导电基板上制造，然后沉积顶部银触点。施加电压写入二进制数据（0.8 ± 0.1 V）、读取（0.4 V）然后擦除（通过 0.4 ± 0.1 V 极性反转）的全自动过程使得处理任意字成为可能。至少 10 个周期。所提供的原型由 10 × 10 存储单元组成，为基于 MOF 的逻辑元件的实际应用开辟了前景，并揭示了其制造和开发的挑战。