This paper presents a compact model for the DC current of Schottky barrier field-effect transistors at deep cryogenic temperatures, close to absolute zero kelvin. The proposed model is physics based and calculates the injection current over a device’s Schottky barriers, by considering physical effects at these temperatures (e.g. quantum oscillations, band tail effect, phonon-assisted tunneling, etc.). For model verification, it is compared to measurements performed on nanowire Schottky barrier transistors at a temperature of 5.5 K.

中文翻译：

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深低温下肖特基势垒晶体管的基于物理的紧凑电流模型，包括带尾效应和量子振荡

本文提出了肖特基势垒场效应晶体管在接近绝对零开尔文的深低温下的直流电流的紧凑模型。所提出的模型是基于物理的，通过考虑这些温度下的物理效应（例如量子振荡、带尾效应、声子辅助隧道效应等）来计算器件肖特基势垒上的注入电流。为了进行模型验证，将其与在 5.5K 温度下对纳米线肖特基势垒晶体管进行的测量进行了比较。