Abstract

The modeling of self-heating in GaN-based devices is presented in this paper. A setup for DC I–V and short pulse I–V was used to characterize the device. This paper used four different methods to estimate self-heating, thermal resistance, and channel temperature in a GaN-based high electron mobility transistor (HEMT) fabricated on a SiC substrate. The procedures are basic and straightforward, making them suitable for determining self-heating. We concentrated on reducing the number of measurements needed to determine self-heating and/or channel temperature for any applied ambient temperatures. In addition, a summary of channel temperature for different GaN HEMTs found in—literatures is also presented. Finally, all of the findings are compared using a fair difference threshold. This work reflects an essential and comprehensive understanding of device technology.

中文翻译：

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AlGaN/GaN HEMT 温度测量电学研究的比较研究

摘要

本文介绍了 GaN 器件中自热的建模。 DC I–V 和短脉冲 的设置I–V 用于表征器件。本文使用四种不同的方法来估算在 SiC 衬底上制造的 GaN 基高电子迁移率晶体管 (HEMT) 的自热、热阻和沟道温度。该程序基本且简单，适合测定自热。我们专注于减少确定任何应用环境温度的自加热和/或通道温度所需的测量次数。此外，还总结了文献中发现的不同 GaN HEMT 的沟道温度。最后，使用公平差异阈值对所有结果进行比较。这项工作反映了对设备技术的基本和全面的理解。