The features peculiar to the solid-state synthesis of MoSi₂ through vacuum heat treatment of a powder mixture of molybdenum and silicon nitride, as a precursor, in the temperature range 1000–1400°C were examined. X-ray diffraction established that the solid-state interaction began at 1100°C and progressed through the reaction diffusion of highly active silicon, resulting from the decomposition of Si₃N₄, into molybdenum to form lower Mo₃Si and Mo₅Si₃ silicide phases. In the temperature range 1100–1300°C, the redistribution of phases occurred: the contents of the starting molybdenum and β-Si₃N₄ components in the reaction mixtures gradually decreased, while the contents of lower molybdenum silicides increased. Molybdenum disilicide formed in situ at 1400°C via successive development of lower silicide phases. The final product contained Mo₅Si₃. This was attributed to a deficiency of silicon as it evaporated at a temperature above 1200°C. This led to the conclusion that the addition of 20 wt.% excess silicon nitride was necessary to produce a homogeneous MoSi₂ phase and up to 40 wt.% excess silicon nitride to produce a two-phase MoSi₂–Si₃N₄ composite powder. The elevated temperature in the synthesis of MoSi₂ compared to conventional synthesis from simple elements was explained by the slow formation of active silicon in the Si₃N₄ dissociation process. Based on the features observed in the solid-state vacuum interaction within the powder mixture of molybdenum and silicon nitride, as a precursor, a method was proposed for producing MoSi₂–Si₃N₄ composite powders, involving the introduction of 30 and 40 wt.% excess Si₃N₄ powder. The synthesis resulted in agglomerated composite powders with a homogeneous distribution of the MoSi₂ and β -Si₃N₄ phases. The MoSi₂ phase exhibited a capsular structure with a smooth surface. The synthesized composite powders are intended for the fabrication of components and parts with high oxidation resistance and corrosion resistance at elevated temperatures.

通过对钼和氮化硅的粉末混合物进行真空热处理固相合成MoSi的特有特征₂对温度范围为 1000–1400°C 的前体进行了检查。 X 射线衍射证实，固态相互作用在 1100°C 时开始，并通过高活性硅的反应扩散进行，而硅的分解是由于 Si₃N₄，转化为钼，形成低级Mo₃Si和Mo₅Si₃硅化物相。在1100~1300℃温度范围内，发生相的重新分布：起始钼和β-Si的含量₃N反应混合物中₄组分逐渐减少，而低级硅化钼含量增加。二硅化钼在 1400°C 下通过连续形成较低的硅化物相而原位形成。最终产物含有Mo₅Si₃。这是由于硅在 1200°C 以上的温度下蒸发造成的。由此得出的结论是，需要添加 20 wt.% 的过量氮化硅来产生均匀的 MoSi₂ 相，并且添加量高达 40 wt.%过量的氮化硅生成两相 MoSi₂–Si₃ N₄复合粉末。与传统的简单元素合成相比，MoSi 的合成温度升高₂ 的原因是 Si 中活性硅的缓慢形成₃N₄ 解离过程。根据以钼和氮化硅粉末混合物为前驱体的固态真空相互作用的观察特征，提出了一种制备MoSi的方法₂–Si₃N₄复合粉末，涉及引入30 和 40 wt.% 过量的 Si₃N₄ 粉末。合成得到了MoSi₂和β-Si₃相呈现出具有光滑表面的胶囊结构。合成的复合粉末可用于制造高温下具有高抗氧化性和耐腐蚀性的零部件。₂ 个阶段。 MoSi₄N