The variation in bandgap energy with decreased size and varying composition of alloys has attracted the attention of researchers over the past few decades. In the present paper, a simple unified model is presented to study the impact of alloying on the bandgap energy of ternary semiconducting compounds with varying composition. The energy bandgap is determined for semiconducting homogeneous nano-compounds with zinc-blende and wurtzite structure, including Zn_xCd_1−xS, Zn_xCd_1−xSe, Cd(S)_x(Se)_1−x, and Cd(Se)_x(Te)_1−x. The model does not involve any adjustable parameters. The study provides insight into the impact of size, dimension, and composition on the energy bandgap of the material and the possibility of tuning the optical properties of semiconducting compounds by alloying, as alloyed compounds could be more stable and have higher luminescence than single semiconducting nanocrystal with a narrower energy bandgap. The model predictions are in good accord with the available experimental and simulated data.

带隙能量随着合金尺寸的减小和成分的变化而变化，在过去的几十年里引起了研究人员的关注。在本文中，提出了一个简单的统一模型来研究合金化对不同成分的三元半导体化合物带隙能的影响。确定了具有闪锌矿和纤锌矿结构的半导体均质纳米化合物（包括 Zn_xCd_{）的能带隙1−x}S、Zn_xCd_1−xSe、Cd(S)_x( Se)_1−x 和 Cd(Se)_x。该模型不涉及任何可调参数。该研究深入了解了尺寸、尺寸和成分对材料能带隙的影响，以及通过合金化调整半导体化合物光学性能的可能性，因为合金化合物比单个半导体纳米晶体更稳定且具有更高的发光度具有更窄的能带隙。模型预测与现有的实验和模拟数据非常吻合。_x1−(Te)