Piezoelectric semiconductors (PSs), such as ZnO and GaN, known as the third-generation semiconductors, have promising applications in electronic and optoelectronic devices due to the coexistence and interaction of piezoelectricity and semiconductor properties. Theoretical modeling of PS structures under external loads, such as thermal and mechanical loads, plays a crucial role in the design of PS devices. In this work, we propose a nonlinear fully coupling theoretical model and investigate the multi-field coupling behaviors of PS structures and PN junctions under thermal and mechanical loads, considering physical and geometric nonlinearities. The electromechanical and semiconducting behaviors of a PS rod-like structure with flexural deformations under different combinations of temperature changes and mechanical loads are evaluated. The tuning effect of temperature changes and mechanical loads on multi-field coupling behaviors of PSs is revealed. The current–voltage characteristics of PS PN junctions are studied under different combinations of temperature changes and mechanical loads. The obtained results are helpful for the development of novel PS devices.

压电半导体（PS），如ZnO和GaN，被称为第三代半导体，由于压电特性和半导体特性的共存和相互作用，在电子和光电器件中具有广阔的应用前景。外部载荷（例如热载荷和机械载荷）下 PS 结构的理论建模在 PS 器件的设计中起着至关重要的作用。在这项工作中，我们提出了一种非线性全耦合理论模型，并考虑物理和几何非线性，研究了 PS 结构和 PN 结在热和机械载荷下的多场耦合行为。评估了在不同温度变化和机械载荷组合下具有弯曲变形的 PS 棒状结构的机电和半导体行为。揭示了温度变化和机械载荷对 PS 多场耦合行为的调节效应。研究了不同温度变化和机械载荷组合下 PS PN 结的电流-电压特性。所得结果有助于新型PS器件的开发。