By embedding additional NPN- and PNP- type bipolar junction transistors into a diode-triggered silicon-controlled rectifier (DTSCR) with single-directional ESD protection, we propose and implement a novel dual-directional DTSCR (DDTSCR) by using the twin-well process in a 0.18-µm CMOS process that provides highly efficient ultra-low-voltage ESD protection. Compared to conventional DTSCRs, the failure current of the proposed DDTSCR increases from 4.5 A to 5.6 A, successfully passing the ESD level tests of human body model at 8 kV and machine model at 650 V. Owing to its unique structural design and metal routing, the ESD protection efficiency of the DDTSCR is twice that of the DTSCR. By adopting a new E-shaped layout (DDTSCR-E), the failure current under positive stress can increase further to 6.6 A. In order to verify the ESD protection performance stabilization with different processes, the DDTSCR-E is fabricated in the 0.18-µm BCD, 0.18-µm and 21-nm CMOS processes, respectively. The trigger voltage of DDTSCR-E is found more stable than other ESD characteristics during the process migration. The high efficiency, the strong ESD robustness and the stable process migration make the proposed DDTSCR a promising ESD protection device for ultra-low-voltage integrated circuits.

通过将额外的 NPN 型和 PNP 型双极结晶体管嵌入到具有单向 ESD 保护的二极管触发硅控整流器 (DTSCR) 中，我们提出并实现了一种新型的双向 DTSCR (DDTSCR)。采用 0.18 µm CMOS 工艺，提供高效超低电压 ESD 保护。与传统的DTSCR相比，所提出的DDTSCR的失效电流从4.5 A增加到5.6 A，成功通过了8 kV人体模型和650 V机器模型的ESD级别测试。由于其独特的结构设计和金属布线， DDTSCR的ESD防护效率是DTSCR的两倍。通过采用新的E形布局（DDTSCR-E），正应力下的失效电流可进一步增加至6.6A。为了验证不同工艺的ESD保护性能稳定性，DDTSCR-E以0.18-分别采用 µm BCD、0.18 µm 和 21 nm CMOS 工艺。在工艺迁移过程中，DDTSCR-E 的触发电压比其他 ESD 特性更稳定。高效率、强大的 ESD 鲁棒性和稳定的工艺迁移使得所提出的 DDTSCR 成为一种有前景的超低压集成电路 ESD 保护器件。