The electronic properties of ScPdGe and ScPdSi, crystallizing in the hexagonal ZrNiAl and orthorhombic TiNiSi structures, respectively, are investigated. ScPdGe and ScPdSi are found to show bulk superconductivity below 0.9 and 1.7 K, respectively, based on electrical resistivity and heat capacity data measured using synthesized polycrystalline samples. First-principles calculations indicate the presence of large contributions of Sc 3d and Pd 4d electrons at the Fermi energy in both materials. The electronic properties and electronic states of these materials are discussed in comparison with those of several superconductors containing scandium and a 4d transition metal element.

中文翻译：

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三元锗化物 ScPdGe 和硅化物 ScPdSi 的超导性

研究了分别在六方ZrNiAl 和斜方TiNiSi 结构中结晶的ScPdGe 和ScPdSi 的电子性质。根据使用合成多晶样品测量的电阻率和热容数据，发现 ScPdGe 和 ScPdSi 分别表现出低于 0.9 和 1.7 K 的体超导性。第一性原理计算表明，Sc 3 d和 Pd 4 d电子在两种材料的费米能上均存在较大贡献。讨论了这些材料的电子特性和电子态，并与几种含有钪和 4 d过渡金属元素的超导体进行比较。