Detectors with cost-effective, polarization-sensitive, and integrative functionalities are required for next-generation ultraviolet (UV) detection systems. Low-dimensional semiconductor materials have potential for optical device applications, especially polarization detection, because of their excellent polarization characteristics. Therefore, ultralong ZnO microwires, ∼0.5 to 1 cm long, were prepared using the chemical vapor-phase epitaxy method, making it easy to build photoelectric devices. The emission polarization of the ZnO microwires excited by circularly polarized light was ∼0.60, indicating a high-anisotropy optical property. Their UV-polarization spectrum and photoelectric detection were determined. When the ZnO microwire was excited by linearly polarized UV light, the intensity of photoluminescence (PL) changed periodically with the polarization direction of the UV light. The PL polarization of the ZnO microwire for linear UV detection was ∼0.12. For a ZnO microwires photoelectric device, the photocurrent anisotropy ratio reached 1.28 when the polarization angle of the incident UV light changed. These results suggest that the obtained ultralong ZnO microwires have the potential for application in future UV-polarization detection systems.

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使用 ZnO 微丝进行紫外光偏振检测

下一代紫外线 (UV) 检测系统需要具有成本效益、偏振敏感和集成功能的检测器。低维半导体材料由于其优异的偏振特性，在光学器件尤其是偏振检测方面具有潜在的应用潜力。因此，利用化学气相外延方法制备了约0.5至1厘米长的超长ZnO微线，使得构建光电器件变得容易。圆偏振光激发的 ZnO 微线的发射偏振约为 0.60，表明其具有高各向异性光学特性。测定了它们的紫外偏振光谱和光电检测。当ZnO微丝被线偏振紫外光激发时，光致发光（PL）强度随着紫外光的偏振方向周期性变化。用于线性紫外检测的 ZnO 微丝的 PL 偏振为 ∼0.12。对于ZnO微线光电器件，当入射紫外光的偏振角改变时，光电流各向异性比达到1.28。这些结果表明所获得的超长氧化锌微线具有在未来紫外偏振检测系统中应用的潜力。