GaFeO (x = 0.0, 0.7, 1.18, 1.36 and 1.54) nanoparticles were synthesised by the auto-combustion method and the consequence of Ga ion substitution on the structural, morphological and dielectric nature of FeO was studied. XRD endorsed the structure of a single spinel phase, having a crystallite size between 26.30 and 26.54 nm, and lattice parameters 8.412 and 8.418 Å. The SEM images confirm the nanoscale of the prepared nanoparticles and the EDS spectra confirm the samples’ purity and the existence of all included elements. The dielectric properties and AC conductivity (σ) were evaluated using an impedance analyzer with a frequency range of 20 Hz − 10 MHz and a temperature range of 27 - 500 °C. The σ value seems to decrease with the rise of Ga ion concentration, and the obtained results elucidate the hopping mechanism. Similarly, a clear deviation was seen for tan δ and the dielectric permittivity (ε') with frequency and temperature. This was clarified by Maxwell-Wagner interfacial polarization and confirmed for the hopping of charges among the Fe and Fe ions at the octahedral sites. The change in the Cole-Cole plot demonstrated a decline in resistivity with a temperature rise. The Nyquist plots drawn for given samples explained the inherent phenomena of the conduction process of gallium doped in FeO.

中文翻译：

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镓掺杂磁铁矿纳米颗粒的结构和介电响应

采用自燃烧法合成了 GaFeO (x = 0.0、0.7、1.18、1.36 和 1.54) 纳米颗粒，并研究了 Ga 离子取代对 FeO 结构、形貌和介电性质的影响。XRD 证实了单尖晶石相的结构，微晶尺寸在 26.30 至 26.54 nm 之间，晶格参数为 8.412 至 8.418 Å。SEM 图像证实了所制备纳米颗粒的纳米级，EDS 光谱证实了样品的纯度和所有所含元素的存在。使用阻抗分析仪评估介电性能和交流电导率（σ），频率范围为20 Hz - 10 MHz，温度范围为27 - 500 °C。σ值似乎随着Ga离子浓度的升高而降低，所得结果阐明了跳跃机制。同样，tanδ 和介电常数 (ε') 随频率和温度的变化也存在明显偏差。麦克斯韦-瓦格纳界面极化澄清了这一点，并证实了八面体位点处 Fe 和 Fe 离子之间的电荷跳跃。科尔-科尔图的变化表明电阻率随温度升高而下降。给定样品绘制的奈奎斯特图解释了 Fe3O 中掺杂镓的传导过程的固有现象。