The two-dimensional (2D) materials InX (X = O, Se), experimentally available thus far, can become a ferromagnetic half metal under hole doping, though the charge neutral states of them are nonmagnetic semiconductors. Based on such an electronic characteristic, a theoretical model of magnetic tunnel junction (MTJ) is proposed composed only of one of the 2D InX. In doing so, the two semi-infinite pieces of 2D InX in the half-metallic state is assumed as the opposite electrodes which are separated by a strip of the same material but in its nonmagnetic state. Owing to the 2D nature of InX, the half metal electrodes of the InX device induced by hole doping can be achieved by using split gating technique. The numerical simulations identify a proper hole doping concentration, at which 100% tunneling magnetoresistance (TMR) ratios can be realized, accompanying an appreciable conductance of majority spin electron under parallel magnetization configuration. Under a finite bias voltage, the TMR ratio remains high. Therefore, the proposed device model is an ideal candidate for future spintronics applications. It enables electrical control of TMR and circumvents the detriment of hetero-interface disorder inevitable in conventional MTJs.

中文翻译：

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使用无异质界面的二维材料 InX (X = O, Se) 实现相当大且可调谐的隧道磁阻的器件模型

迄今为止通过实验获得的二维（2D）材料InX（X = O，Se）可以在空穴掺杂下成为铁磁半金属，尽管它们的电荷中性态是非磁性半导体。基于这样的电子特性，提出了仅由一个2D InX组成的磁隧道结（MTJ）的理论模型。在此过程中，半金属状态的两个半无限 2D InX 被假定为相对的电极，它们被相同材料但处于非磁性状态的条带隔开。由于InX的二维性质，空穴掺杂引起的InX器件的半金属电极可以通过使用分裂栅极技术来实现。数值模拟确定了合适的空穴掺杂浓度，在该浓度下可以实现 100% 的隧道磁阻 (TMR) 比率，同时在平行磁化配置下多数自旋电子具有可观的电导。在有限偏置电压下，TMR 比率保持较高。因此，所提出的器件模型是未来自旋电子学应用的理想候选者。它能够实现 TMR 的电气控制，并避免传统 MTJ 中不可避免的异质界面紊乱的损害。