This work focuses on the fabrication of niobium through silicon vias (TSV) superconductors interconnects. The effect of supercycle of sequential oxidation and chemical etching process on the through-etch wall quality was investigated. It was experimentally shown that the use of supercycle in the fabrication process leads to significant improvement of the TSV wall quality and removal of the defect type—scallops. After 12 times repetitions of supercycles a dissipative bonding of superconducting strips on the front and back side of the sample is observed. The critical current density of such coupling is 5 × 10⁴ A cm⁻². The critical ratio of substrate thickness to hole diameter at which electrical coupling is formed is 3:1.

中文翻译：

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用于低温电子器件的超导 TSV 接触

这项工作的重点是铌硅通孔 (TSV) 超导体互连的制造。研究了连续氧化和化学蚀刻工艺的超级循环对蚀刻壁质量的影响。实验表明，在制造过程中使用超级循环可以显着改善 TSV 壁的质量并消除缺陷类型——扇贝。重复 12 次超级循环后，可以观察到样品正面和背面的超导带的耗散粘合。这种耦合的临界电流密度为5×10 ⁴ A cm ^-2。形成电耦合的基板厚度与孔径的临界比为3:1。