A novel method for the synthesis of 2H-NbSe₂ thin films by selenization of precursor Nb thin films is reported. The polycrystalline films grow predominantly in the hexagonal 2H-NbSe₂ phase with bulk lattice constants. Their remarkable microstructure consists of a three-dimensional network of flake-like grains substantially stacked vertically on the substrate. The electronic transport between 1.2 K and 300 K in zero and applied magnetic fields up to 14 T has been extensively studied. The study comprises resistivity, magnetoresistance, Hall coefficient, upper critical field, and critical current density. The results are discussed taking account of the coexisting charge-density-wave and superconducting phases.

中文翻译：

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Nb薄膜硒化合成2H-NbSe2的输运特性

报道了一种通过前体铌薄膜硒化合成2H-NbSe ₂薄膜的新方法。多晶薄膜主要在具有体晶格常数的六方2H-NbSe _{2相中生长。}它们显着的微观结构由基本上垂直堆叠在基材上的片状颗粒的三维网络组成。零磁场和高达 14 T 的外加磁场中 1.2 K 至 300 K 之间的电子传输已得到广泛研究。研究内容包括电阻率、磁阻、霍尔系数、上临界场和临界电流密度。考虑到共存的电荷密度波和超导相，讨论了结果。