A new high-performance exclusive OR/exclusive NOR (XOR/XNOR) architecture with ten transistors is proposed in this work. Our research focused on implementing a hybrid exclusive OR/exclusive NOR circuit to achieve high performance, good driving capability, and low energy operation for deep sub-micrometer applications. Afterwards, a full adder (FA) circuit is implemented using the proposed exclusive OR/exclusive NOR design. All circuits are examined and simulated using Generic Process Design Kit 90 nm CMOS technology and a cadence spectra simulator. In terms of power delay product (PDP), the simulation results indicate that the proposed exclusive OR/exclusive NOR and FA design is more efficient than the existing circuits. In addition, the proposed exclusive OR/exclusive NOR and FA are implemented at the device level with Visual TCAD (Technology Computer-Aided Design) software, and the performance is tested using the Genius simulator.

这项工作提出了一种具有十个晶体管的新型高性能异或/异或非（XOR/XNOR）架构。我们的研究重点是实现混合异或/异或非电路，以实现深亚微米应用的高性能、良好的驱动能力和低能耗运行。然后，使用所提出的异或/异或非设计实现全加器（FA）电路。所有电路均使用通用工艺设计套件 90 nm CMOS 技术和节奏频谱模拟器进行检查和模拟。在功率延迟乘积（PDP）方面，仿真结果表明所提出的异或/异或非和FA设计比现有电路更有效。此外，所提出的独占OR/独占NOR和FA是通过Visual TCAD（技术计算机辅助设计）软件在器件级实现的，并使用Genius模拟器测试性能。