New experimental results are presented that describe the role of oxygen centers on structural lattice defects in the optics of A₂B₆ compounds. It is shown for the first time that that these formations contain unusual D–A pairs with an isoelectronic impurity O_S. Using the methods of optical control of microcathodoluminescence spectra, the features of the distribution of oxygen in crystals have been studied. The emission and absorption spectra of self-activated CdS, ZnS, and ZnSe crystals are analyzed on the basis of modern concepts of the band anticrossing theory. In the region of the fundamental absorption edge in the central part of the homogeneity region of these crystals with different known oxygen contents, bands of the same type of complex emission spectra were identified. Various types of edge glow are revealed. The connection between the edge emission and a localized exciton at stacking faults has been confirmed. For the first time, the nature of two types of p-type ZnSe edge emission has been refined using a unified model. New data are presented confirming the role of temperature for the manifestation of exciton luminescence of the base or the glow of oxygen segregations on stacking faults. The results obtained make it possible to elucidate the compositions of crystals and combinations of defects in A₂B₆ crystals, which determine their stable state for use in optoelectronics.

新的实验结果描述了氧中心对 A ₂ B ₆化合物光学结构晶格缺陷的作用。首次表明这些结构包含不寻常的 D-A 对和等电子杂质 O _S。利用微阴极发光光谱的光学控制方法，研究了晶体中氧的分布特征。基于能带反交叉理论的现代概念，分析了自激活 CdS、ZnS 和 ZnSe 晶体的发射和吸收光谱。在这些具有不同已知氧含量的晶体的均匀区域中心部分的基本吸收边区域中，识别出相同类型的络合物发射光谱的谱带。显示出各种类型的边缘发光。边缘发射与堆垛层错处的局域激子之间的联系已得到证实。首次使用统一模型对两种类型的 p 型 ZnSe 边缘发射的性质进行了细化。新数据证实了温度对于基极激子发光或堆垛层错上氧偏析发光的作用。_{所获得的结果使得阐明晶体的组成和A 2} B ₆晶体中的缺陷组合成为可能，这决定了它们在光电子学中使用的稳定状态。