Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and memory devices. Many of those applications are the most prospective in thin film form. The antiferroelectric ordering in thin films is highly sensitive to a rich set of factors, such as lattice strain, film thickness, surface and interface effects as well as film stoichiometry. To unlock the full potential of these materials and design high-quality thin films for functional devices, a comprehensive and systematic understanding of their behavior is essential. In conjunction with the necessary fundamental background of antiferroelectrics, we review recent progress on various antiferroelectric oxide thin films, the key parameters that trigger their phase transition and the device applications that rely on the robust responses to electric, thermal, and optical stimuli. Current challenges and future perspectives highlight new and emerging research directions in this field. We hope this review can boost the development of antiferroelectric thin-film materials and device design, stimulating more researchers to explore the unknowns together.

由于在能量存储、固态冷却、热开关、传感器、驱动和存储设备方面的广泛潜在应用，反铁电体受到了广泛的关注。其中许多应用以薄膜形式最有前景。薄膜中的反铁电有序性对一系列丰富的因素高度敏感，例如晶格应变、薄膜厚度、表面和界面效应以及薄膜化学计量。为了充分发挥这些材料的潜力并为功能器件设计高质量薄膜，必须全面、系统地了解它们的行为。结合反铁电学必要的基础背景，我们回顾了各种反铁电氧化物薄膜、触发其相变的关键参数以及依赖于对电、热和光刺激的鲁棒响应的器件应用的最新进展。当前的挑战和未来的前景突出了该领域新的和新兴的研究方向。我们希望这篇综述能够促进反铁电薄膜材料和器件设计的发展，激励更多的研究人员共同探索未知领域。