Photoresist (PR) NFR 016D4 films deposited on the surface of silicon (Si) wafers by centrifugation were studied by attenuated total internal reflection Fourier-IR spectroscopy. Background absorption of the PR/Si structures was observed to increase at wave numbers <1600 cm⁻¹ because of the effect of electromagnetic radiation on the Si substrate and scattering/reflection at the PR/Si interface. Asymmetry in the force field of the aromatic ring in the NFR 016D4 film was detected. Spectral features of thick PR NFR 016D4 films were due to the presence of residual solvent. Formaldehyde formed by fragmentation of hydroxymethyl residues in the phenol-formaldehyde resin was detected in irradiated films. Radiation-induced processes in PR NFR 016D4 films at doses up to 2∙10¹⁵ cm⁻² involved mainly residual solvent molecules or by-products of PR film synthesis.

通过衰减全内反射傅里叶红外光谱研究了通过离心沉积在硅 (Si) 晶片表面的光刻胶 (PR) NFR 016D4 薄膜。观察到PR/Si结构的背景吸收在波数<1600cm ^-1处增加，这是由于电磁辐射对Si基底的影响以及PR/Si界面处的散射/反射的影响。检测到 NFR 016D4 薄膜中芳环力场的不对称性。PR NFR 016D4 厚膜的光谱特征是由于残留溶剂的存在造成的。在辐照薄膜中检测到酚醛树脂中羟甲基残基裂解形成的甲醛。PR NFR 016D4 薄膜中剂量高达 2∙10 ¹⁵ cm ^-2的辐射诱导过程主要涉及残留溶剂分子或 PR 薄膜合成的副产物。