We developed a new etching technique using plasma generated at high pressure up to 9 atm. Operating at 9-atm pressure with a 30-μm-diameter wire electrode, we demonstrated the generation of well-ordered plasma at a narrow gap of ∼10 μm between the electrode and workpiece, and realized a high spatial resolution of <40 μm during processing. This technique should allow for the processing of high-precision X-ray crystal optical devices with compact and complex structures, such as a micro channel-cut crystal monochromator with an extremely narrow (sub-100 μm width) groove for realization of Fourier-transform-limited X-ray lasers with high intensity.

中文翻译：

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高达 9 atm 的高压等离子蚀刻，可在高精度 X 射线晶体光学器件的窄槽内进行均匀处理

我们开发了一种新的蚀刻技术，使用在高达 9 个大气压的高压下产生的等离子体。在 9-atm 压力下运行，30-μm 直径的线电极，我们证明了在 ∼10 的狭窄间隙中产生良好有序的等离子体μ电极和工件之间的米，实现了<40的高空间分辨率μm 加工过程中。该技术应该能够加工结构紧凑、复杂的高精度X射线晶体光学器件，例如具有极窄（亚100）的微通道切割晶体单色仪。μm 宽）凹槽，用于实现高强度傅里叶变换限制 X 射线激光器。