Environmentally friendly tin (Sn) perovskites have received considerable attention due to their great potential for replacing their toxic lead counterparts in applications of photovoltaics and light-emitting diodes (LEDs). However, the device performance of Sn perovskites lags far behind that of lead perovskites, and the highest reported external quantum efficiencies of near-infrared Sn perovskite LEDs are below 10%. The poor performance stems mainly from the numerous defects within Sn perovskite crystallites and grain boundaries, leading to serious non-radiative recombination. Various epitaxy methods have been introduced to obtain high-quality perovskites, although their sophisticated processes limit the scalable fabrication of functional devices. Here we demonstrate that epitaxial heterodimensional Sn perovskite films can be fabricated using a spin-coating process, and efficient LEDs with an external quantum efficiency of 11.6% can be achieved based on these films. The film is composed of a two-dimensional perovskite layer and a three-dimensional perovskite layer, which is highly ordered and has a well-defined interface with minimal interfacial areas between the different dimensional perovskites. This unique nanostructure is formed through direct spin coating of the perovskite precursor solution with tryptophan and SnF₂ additives onto indium tin oxide glass. We believe that our approach will provide new opportunities for further developing high-performance optoelectronic devices based on heterodimensional perovskites.

环保型锡（Sn）钙钛矿因其在光伏和发光二极管（LED）应用中替代有毒铅对应物的巨大潜力而​​受到广泛关注。然而，锡钙钛矿的器件性能远远落后于铅钙钛矿，目前报道的近红外锡钙钛矿LED的最高外量子效率低于10%。性能不佳的主要原因是Sn钙钛矿微晶和晶界内存在大量缺陷，导致严重的非辐射复合。人们已经引入了各种外延方法来获得高质量的钙钛矿，尽管其复杂的工艺限制了功能器件的可扩展制造。在这里，我们证明了可以使用旋涂工艺制备外延异维Sn钙钛矿薄膜，并且基于这些薄膜可以实现外量子效率为11.6%的高效LED。该薄膜由二维钙钛矿层和三维钙钛矿层组成，其高度有序，并且具有明确的界面，不同维钙钛矿之间的界面面积最小。_{这种独特的纳米结构是通过将含有色氨酸和SnF 2}添加剂的钙钛矿前体溶液直接旋涂到氧化铟锡玻璃上而形成的。我们相信，我们的方法将为进一步开发基于异维钙钛矿的高性能光电器件提供新的机会。