The van der Waals (vdW) heterostructures exhibit excellent promise in nanoelectronics and optoelectronics. We present a novel vdW heterostructure made of graphene and a monolayer (ML) of WGe₂N₄ and use first-principles calculations to investigate how the Schottky barrier height (SBH) is impacted by an external electric field (E_ext). Both component layers retain their fundamental electronic characteristics well due to the weak interfacial interaction. The graphene/WGe₂N₄ heterojunction is sensitive to E_ext. The contact becomes an n-type and p-type ohmic contact at E_ext = -0.3 V/Å and 0.6 V/Å, respectively. These findings suggest promising applications of the graphene/WGe₂N₄ vdW heterostructure in nanoelectronics.

范德华（vdW）异质结构在纳米电子学和光电子学领域表现出良好的前景。_{我们提出了一种由石墨烯和 WGe 2} N ₄单层 (ML) 制成的新型 vdW 异质结构，并使用第一原理计算来研究肖特基势垒高度 (SBH) 如何受到外部电场 (E _ext ) 的影响。由于界面相互作用较弱，两个组件层都很好地保留了其基本电子特性。石墨烯/WGe ₂ N _{4异质结对}E _ext敏感。当E _ext = -0.3 V/Å 和 0.6 V/Å 时，接触分别变为n型和p型欧姆接触 。这些发现表明石墨烯/WGe ₂ N ₄ vdW 异质结构在纳米电子学中的应用前景广阔。