Abstract

The effect of Gaussian noise on the switching of a ZrO₂(Y) based memristor from the low resistance state (LRS) into the high resistance state (HRS) including transitions from the LRS into intermediate metastable states has been studied. The series of positive (with addition of the noise signal or without the one) and negative rectangular voltage pulses were used as the switching signals. The adding of noise to the switching signal initiated the switching of the memristor from the LRS into the HRS at smaller pulse magnitudes than in the case of switching by the rectangular pulses without adding the noise. A necessary (preset) HRS can be achieved passing the intermediate states by adding the noise with certain parameters to the rectangular switching pulses. The resistive switching is performed without application of adaptive switching protocols. The results of the present study can be applied in the development of innovative memristor switching protocols.

中文翻译：

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噪声对氧化钇稳定氧化锆基忆阻器阻变的影响

摘要

_{研究了高斯噪声对ZrO 2} (Y)基忆阻器从低阻态(LRS)到高阻态(HRS)的切换的影响，包括从LRS到中间亚稳态的转变。使用一系列正（添加或不添加噪声信号）和负矩形电压脉冲作为开关信号。与通过矩形脉冲进行切换而不添加噪声的情况相比，向切换信号添加噪声引发了忆阻器以更小的脉冲幅度从LRS切换到HRS。通过将具有某些参数的噪声添加到矩形开关脉冲，可以实现通过中间状态所需的（预设）HRS。电阻切换是在不应用自适应切换协议的情况下执行的。本研究的结果可应用于创新忆阻器开关协议的开发。