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Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO2 dielectric for 2.5D MIMCAPs
Solid-State Electronics ( IF 1.7 ) Pub Date : 2024-01-15 , DOI: 10.1016/j.sse.2024.108864
Corinna Fohn , Emmanuel Chery , Kristof Croes , Michele Stucchi , Valeri Afanas’ev

The reliability of an Al-doped HfO2 dielectric used in a high density 2.5D MIMCAP is investigated by constant voltage stress (CVS) and voltage ramp stress (VRS) measurements. The good agreement of the results from the two techniques allows to propose a model for lifetime prediction based on the breakdown characteristics. The extracted activation energy shows a voltage dependence associated with a change in the degradation characteristics of the high-κ material at high fields.



中文翻译:

用于 2.5D MIMCAP 的先进掺铝 HfO2 电介质的基于电压斜坡应力的寿命预测模型

Al掺杂HfO的可靠性2通过恒压应力 (CVS) 和电压斜坡应力 (VRS) 测量研究高密度 2.5D MIMCAP 中使用的电介质。两种技术的结果非常一致,可以提出一种基于击穿特性的寿命预测模型。提取的活化能显示出与高退化特性的变化相关的电压依赖性。κ高场材料。

更新日期:2024-01-15
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