Quantum bits (qubits) operations in electrically defined Silicon (Si) triple quantum dots (TQDs) are computationally investigated to elevate the potential of TQD structure as a platform for quantum information processing. Employing a realistic Si$/$Si-germanium heterostructure as a target model, device simulations are conducted to secure an initialized qubit state. Basic programmability is verified through implementation of individual qubit operations and 2-qubit entangling operations between neighboring QDs. Constructing a gate sequence composed of 1-qubit and 2-qubit blocks, then, we not only generate three-qubit Greenberger–Horne–Zeilinger state, but also quantify the degradation of state fidelity under the inevitable inaccuracy which are incorporated in the dominant factors of spin-qubit Hamiltonian. Presenting engineering details that are hard to be carried by simulations based on the first principle theory, this work can be served as a practical guideline for designs of scalable quantum processors with electron spin-qubits in Si QD platforms.

通过计算研究电学定义的硅(Si) 三重量子点 (TQD) 中的量子位 (qubit) 操作，以提升 TQD 结构作为量子信息处理平台的潜力。采用现实的 Si$/$以硅锗异质结构作为目标模型，进行器件模拟以确保初始化的量子位状态。通过实施单个量子位操作和相邻 QD 之间的 2 量子位纠缠操作来验证基本可编程性。构造一个由 1 量子位和 2 量子位块组成的门序列，然后，我们不仅生成三量子位 Greenberger-Horne-Zeilinger 状态，而且还量化了在不可避免的不准确情况下状态保真度的下降，这些不准确被纳入主导因素自旋量子位哈密顿量。这项工作提出了基于第一原理理论的模拟难以实现的工程细节，可以作为 Si QD 平台中具有电子自旋量子位的可扩展量子处理器设计的实用指南。