In this study, we investigated the linear photogalvanic effect (PGE) phenomena in an armchair photodetector device based on the B₂C₄P₂ monolayer, which was predicted and studied in a previous work (J Phys Chem Lett 12:3436–3442, 2021). The produced photocurrents show a cosine relation with the incident angles, and the vacancies and substitution-doping can significantly enhance the photocurrents generated and form robust PGEs due to the incremental asymmetry in the B₂C₄P₂ photodetector. Additionally, the armchair B₂C₄P₂ photodetector possesses a very high extinction ratio corresponding to a more sensitive polarization detection. This work demonstrates that the B₂C₄P₂ monolayer can be used as the high-performance PGE-driven photodetector in low-energy-consumption optoelectronics devices.

Graphical abstract

Robust photogalvanic effect (PGE) phenomena and very high extinction ratio have been produced in the armchair B₂C₄P₂ photodetector with the vacancies and substitution-doping included.

中文翻译：

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通过空位和取代掺杂在扶手椅 B2C4P2 光电探测器中产生强大的光电效应

在本研究中，我们研究了基于 B ₂ C ₄ P ₂单层的扶手椅光电探测器装置中的线性光电效应 (PGE) 现象，该现象在之前的工作中进行了预测和研究 (J Phys Chem Lett 12:3436–3442， 2021）。产生的光电流与入射角呈余弦关系，并且由于B 2 _C 4 _P 2_光电探测器中增量不对称性，空位和取代掺杂可以显着增强产生的光电流并形成鲁棒的PGE。此外，扶手椅B ₂ C ₄ P ₂光电探测器具有非常高的消光比，对应于更灵敏的偏振检测。这项工作表明B ₂ C ₄ P ₂单层可以用作低能耗光电器件中的高性能PGE驱动的光电探测器。

图形概要

在包含空位和取代掺杂的扶手椅B ₂ C ₄ P ₂光电探测器中产生了鲁棒的光电效应（PGE）现象和非常高的消光比。