Many emerging opportunities, such as three-dimensional (3D) sensing, biophotonics, and optical data links, call for vertical cavity surface-emitting lasers (VCSELs) that operate in the short-wavelength infrared (SWIR) range. In this paper, we report the use of InP distributed Bragg reflector (DBR) mirrors to overcome an impasse in wafer-level mass production of SWIR VCSELs. The DBRs were based on homoepitaxial InP structures and selectively converted through electrochemistry into quarter-wavelength stack structures of alternating nanoporous (NP) and nonporous InP layers with a record index contrast (Δn∼1.0$\Delta {\rm{n}}\sim{1.0}$) and near-unity reflectivity. We demonstrated VCSEL operation at both 1380 and 1550 nm from two separate structures prepared on InP substrates using NP–InP DBRs as the bottom mirror and dielectric DBRs as the top mirror. Room temperature continuous-wave (CW) operation of SWIR VCSELs was successfully achieved at both wavelengths with a threshold current density below 2kA/cm2${{2}}\;{\rm{kA/c}}{{\rm{m}}^2}$, greater than milliwatt optical output, and a peak power conversion efficiency of 17%. Our work provides strong evidence that the decades-old challenge, in preparing an InP-compatible, high-performance DBR to support the SWIR-emitting vertical cavity, has been addressed and is poised to enable new applications.

中文翻译：

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InP 光子工程同质外延短波长红外 VCSEL

许多新兴机会，例如三维 (3D) 传感、生物光子学和光学数据链路，都需要在短波红外 (SWIR) 范围内工作的垂直腔表面发射激光器 (VCSEL)。在本文中，我们报告了使用 InP 分布式布拉格反射镜 (DBR) 来克服短波红外 VCSEL 晶圆级大规模生产的僵局。DBR 基于同质外延 InP 结构，并通过电化学选择性地转换为交替纳米多孔 (NP) 和无孔 InP 层的四分之一波长堆叠结构，具有创纪录的折射率对比度 ( Δ n ∼ 1.0$\Delta {\rm{n}}\sim{1.0}$ ) 和接近统一的反射率。我们展示了在 InP 衬底上制备的两个独立结构在 1380 和 1550 nm 下的 VCSEL 操作，使用 NP-InP DBR 作为底部反射镜，电介质 DBR 作为顶部反射镜。SWIR VCSEL 在两个波长下成功实现了室温连续波 (CW) 操作，阈值电流密度低于2k A / c m 2${{2}}\;{\rm{kA/c}}{{\rm{m}}^2}$，大于毫瓦级光输出，峰值功率转换效率为17%。我们的工作提供了强有力的证据，证明数十年来面临的挑战，即制备 InP 兼容的高性能 DBR 以支持短波红外发射垂直腔，已经得到解决，并有望实现新的应用。