The present study employs a cost-effective laser ablation technique in combination with the RF sputtering method to successfully synthesize silver nanoparticles encapsulated by zinc oxide on a silicon (Si) substrate. This synthesis approach aims to enhance the efficiency of photodetector devices while concurrently reducing material expenses, thereby promoting advancements in photodetector applications. The incorporation of various plasmonic nanoparticles (NPs) into the photodetector's architecture is demonstrated as a means to substantially improve the photoresponse of UV photodetectors. Three distinct samples, denoted as AgNPs/Si, AgNPs/ZnO/Si, and ZnO/AgNPs/Si, underwent comprehensive analysis and characterization of their morphological attributes, crystal structures, elemental composition, and optical properties. The UV photodetection efficacy of these samples was evaluated by subjecting them to 385 nm UV light at different bias voltages. The current-voltage (I-V) characteristics of the ZnO/AgNPs/Si photodetector revealed significantly enhanced conductivity in comparison to the AgNPs/Si and AgNPs/ZnO/Si counterparts. Remarkably, the ZnO/AgNPs/Si photodetector exhibited the highest responsivity value of 132 A/W, accompanied by quantum efficiency of 429.88, sensitivity of 31,400%, gain of 315, detectivity of 18 × 10 Jones, and a noise equivalent power (NEP) of 0.556 × 10 W. These findings underscore the efficacy of our innovative broadband photodetector, highlighting its potential for practical implementation. This research offers valuable insights into the enhancement of photodetector performance and its applicability in real-world scenarios.

中文翻译：

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激光烧蚀银纳米粒子增强的基于 ZnO 和 Si 半导体的紫外光电探测器的开发

本研究采用经济有效的激光烧蚀技术结合射频溅射方法，成功地在硅（Si）基底上合成了氧化锌封装的银纳米颗粒。这种合成方法旨在提高光电探测器器件的效率，同时减少材料费用，从而促进光电探测器应用的进步。事实证明，将各种等离子体纳米颗粒 (NP) 纳入光电探测器的架构中可以显着改善紫外光电探测器的光响应。三种不同的样品，分别表示为 AgNPs/Si、AgNPs/ZnO/Si 和 ZnO/AgNPs/Si，对其形态属性、晶体结构、元素组成和光学性质进行了全面分析和表征。通过将这些样品置于不同偏压下的 385 nm 紫外光下，评估其紫外光电检测功效。ZnO/AgNPs/Si 光电探测器的电流-电压 (IV) 特性表明，与 AgNPs/Si 和 AgNPs/ZnO/Si 对应物相比，其电导率显着增强。值得注意的是，ZnO/AgNPs/Si光电探测器表现出最高的响应度值为132 A/W，量子效率为429.88，灵敏度为31,400%，增益为315，探测灵敏度为18 × 10 Jones，噪声等效功率（NEP） ）为 0.556 × 10 W。这些发现强调了我们创新的宽带光电探测器的功效，强调了其实际实施的潜力。这项研究为光电探测器性能的增强及其在现实场景中的适用性提供了宝贵的见解。