Plasma atomic layer etching (ALE) processes for SiO₂ and Si₃N₄ and reactive ion etching (RIE) processes for SiO₂ with hole patterns were developed using C₄F₈ and the low global warming potential gases of perfluoroisopropyl vinyl ether (PIPVE) and perfluoropropyl vinyl ether (PPVE). The ALE windows of SiO₂ and Si₃N₄ were in the range of 50.0–57.5 V for all precursors. Etch per cycle of SiO₂ was determined to be 5.5 Å/cycle (C₄F₈), 3.3 Å/cycle (PIPVE), and 5.4 Å/cycle (PPVE), all lower than that of Si₃N₄. PPVE reduced global warming emissions by 49%, demonstrating better vertical etch profiles in RIE compared to C₄F₈.

中文翻译：

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用于 SiO2 和 Si3N4 等离子原子层蚀刻和反应离子蚀刻的低全球变暖 C5F10O 异构体

_{使用C 4} F ₈和低全球变暖潜能气体全氟异丙基乙烯基醚(PIPVE)开发了针对SiO ₂和Si ₃ N ₄的等离子体原子层蚀刻(ALE)工艺以及针对具有孔图案的SiO ₂的反应离子蚀刻(RIE)工艺。 ）和全氟丙基乙烯基醚（PPVE）。_{所有前驱体的 SiO 2}和 Si ₃ N ₄的 ALE 窗口均在 50.0-57.5 V 范围内。_{SiO 2}的每个循环蚀刻被确定为5.5 埃/循环(C ₄ F ₈ )、3.3 埃/循环(PIPVE)和5.4 埃/循环(PPVE)，均低于Si ₃ N ₄的蚀刻。PPVE 将全球变暖排放量减少了 49%，与 C ₄ F ₈相比，RIE 中的垂直蚀刻剖面表现出更好的效果。