Device stability is one of the key parameters for transistor applications. To improve the stability of Indium oxide (In₂O₃) after a long-time gate bias, a synthetic solution of hafnium chloride (HfCl₄) and indium nitrate (In(NO₃)₃∙xH₂O) reagents were used to obtain 0% to 5-at.% Hf doped In₂O₃ thin-film transistors. With the increase of Hf doping concentration, oxygen vacancies and residual hydroxyl groups continue to decrease, suppressing the carrier concentration and influencing the trap state density of In₂O₃. The sub-threshold slope (SS) 0.78 V·dec⁻¹ for the undoped In₂O₃ transistor in this work is a typical value. When the dopant dose is up to 5-at.%, SS decreases to 0.32 V·dec⁻¹. According to the proportional relationship between SS and the density of trap states, it shows that the density of trap states in the dielectric layer and the semiconductor/dielectric interface SS is greatly reduced after 5-at.% Hf doping. The probability of the charge being trapped is dropped as well. At the same time, under the doping of Hf, the transistor exhibits a very small threshold voltage shift. Especially at the dopant dose of 5-at.%, the transfer characteristic curve hardly shifts. This work demonstrates an In₂O₃ transistor with high bias stability by doping method.

器件稳定性是晶体管应用的关键参数之一。_{为了提高氧化铟(In 2} O ₃ )在长时间栅极偏压后的稳定性，使用氯化铪(HfCl ₄ )和硝酸铟(In(NO ₃ ) ₃ ∙xH ₂ O)试剂的合成溶液获得0％至5at.％Hf掺杂的In ₂ O ₃薄膜晶体管。随着Hf掺杂浓度的增加，氧空位和残留羟基不断减少，抑制了载流子浓度，影响了In ₂ O ₃的陷阱态密度。本工作中未掺杂In ₂ O ₃晶体管的亚阈值斜率(SS) 0.78 V·dec ^-1是典型值。当掺杂剂剂量达到5-at.%时，SS降低至0.32V·dec ^-1 。根据SS与陷阱态密度的比例关系可知，经过5-at.% Hf掺杂后，介质层和半导体/介质界面SS中的陷阱态密度大大降低。电荷被俘获的概率也下降了。同时，在Hf掺杂下，晶体管表现出非常小的阈值电压漂移。特别是在掺杂剂量为 5-at.% 时，传输特性曲线几乎没有移动。这项工作展示了通过掺杂方法具有高偏置稳定性的In ₂ O _{3晶体管。}