We report area-selective deposition of palladium using sequential area-blocking and area-activation ALD processes. Thermal atomic layer deposition (ALD) of palladium is investigated at 100 °C using palladium (II) hexafluoroacetylacetonate and hydrogen. Palladium deposition does not proceed at such a low temperature unless catalytic sites are present to dissociate hydrogen during Pd film nucleation and before sufficient Pd has accumulated to serve as the catalyst for hydrogen dissociation. Ultrathin (<2 nm) nickel metal surfaces served as the initial catalytic sites and are prepared via low temperature (100 °C) reduction of NiO ALD films using a H-atom doser operating at 3 × 10−5 Torr. The Ni0 films are shown to seed the ALD of Pd, demonstrating a route to Pd ALD by area activation. Blanket NiO films are used to study Pd ALD growth and patterned NiO films, formed by area-blocking ALD, are used to demonstrate a bottom-up approach to patterned Pd films.

中文翻译：

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钯的区域选择性原子层沉积

我们报告了使用连续区域阻挡和区域激活 ALD 过程的区域选择性沉积钯。使用六氟乙酰丙酮钯 (II) 和氢气在 100 °C 下研究钯的热原子层沉积 (ALD)。钯沉积不会在如此低的温度下进行，除非在 Pd 膜成核过程中以及在足够的 Pd 积累作为氢离解催化剂之前存在离解氢的催化位点。超薄（<2 nm）镍金属表面作为初始催化位点，通过使用在 3 × 10−5 Torr 下运行的氢原子剂量器低温（100 °C）还原 NiO ALD 薄膜来制备。Ni0 薄膜显示出 Pd ALD 的种子，展示了通过区域激活实现 Pd ALD 的途径。毯状 NiO 薄膜用于研究 Pd ALD 生长，而通过区域阻挡 ALD 形成的图案化 NiO 薄膜用于演示图案化 Pd 薄膜的自下而上方法。