A simple solid-state reaction method has been used to synthesize Magnesium doped Zinc Oxide (Zn_1-xMg_xO, x = 0, 0.01, 0.02 and 0.03) ceramic samples with varying doping concentration. The phase analysis of the synthesized samples was carried out using X-ray diffraction (XRD). The negative temperature coefficient of resistance (NTCR) behaviour and the conductivity of the synthesized samples were studied using impedance spectroscopy. The synthesized samples show single-phase hexagonal wurtzite structure indicating successful doping of magnesium in ZnO lattice. The complex impedance behaviour of the synthesized sample shows a decrease in resistance with increase in temperature i,e the Negative Temperature Coefficient of Resistance (NTCR) nature. The AC conductivity of the synthesized sample was found to follow the correlated barrier hopping (CBH) model in the investigated temperature and frequency range. The equivalent electrical circuit of ZnO and Mg doped ZnO ceramic sample shows a parallel combination of bulk resistance (R_b) and bulk capacitance (C_b).

采用简单的固相反应方法合成了不同掺杂浓度的镁掺杂氧化锌（Zn _1-x Mg _x O, x = 0、0.01、0.02 和 0.03）陶瓷样品。使用X射线衍射(XRD)对合成样品进行物相分析。使用阻抗谱研究了合成样品的负电阻温度系数（NTCR）行为和电导率。合成的样品显示出单相六方纤锌矿结构，表明镁成功掺杂到 ZnO 晶格中。合成样品的复阻抗行为显示电阻随温度升高而降低，即负电阻温度系数 (NTCR) 性质。发现合成样品的交流电导率在研究的温度和频率范围内遵循相关势垒跳跃 (CBH) 模型。ZnO 和 Mg 掺杂 ZnO 陶瓷样品的等效电路显示体电阻 (R _b ) 和体电容 (C _b ) 的并联组合。