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How to improve the structural stabilities of halide perovskite quantum dots: review of various strategies to enhance the structural stabilities of halide perovskite quantum dots
Nano Convergence ( IF 11.7 ) Pub Date : 2024-01-27 , DOI: 10.1186/s40580-024-00412-x
Dokyum Kim , Taesun Yun , Sangmin An , Chang-Lyoul Lee

Halide perovskites have emerged as promising materials for various optoelectronic devices because of their excellent optical and electrical properties. In particular, halide perovskite quantum dots (PQDs) have garnered considerable attention as emissive materials for light-emitting diodes (LEDs) because of their higher color purities and photoluminescence quantum yields compared to conventional inorganic quantum dots (CdSe, ZnSe, ZnS, etc.). However, PQDs exhibit poor structural stabilities in response to external stimuli (moisture, heat, etc.) owing to their inherent ionic nature. This review presents recent research trends and insights into improving the structural stabilities of PQDs. In addition, the origins of the poor structural stabilities of PQDs and various methods to overcome this drawback are discussed. The structural degradation of PQDs is mainly caused by two mechanisms: (1) defect formation on the surface of the PQDs by ligand dissociation (i.e., detachment of weakly bound ligands from the surface of PQDs), and (2) vacancy formation by halide migration in the lattices of the PQDs due to the low migration energy of halide ions. The structural stabilities of PQDs can be improved through four methods: (1) ligand modification, (2) core–shell structure, (3) crosslinking, and (4) metal doping, all of which are presented in detail herein. This review provides a comprehensive understanding of the structural stabilities and opto-electrical properties of PQDs and is expected to contribute to future research on improving the device performance of perovskite quantum dot LEDs (PeLEDs).

中文翻译:

如何提高卤化物钙钛矿量子点的结构稳定性:增强卤化物钙钛矿量子点结构稳定性的各种策略综述

卤化物钙钛矿因其优异的光学和电学性能而成为各种光电器件的有前途的材料。特别是,卤化物钙钛矿量子点(PQD)作为发光二极管(LED)的发射材料受到了相当大的关注,因为与传统的无机量子点(CdSe、ZnSe、ZnS等)相比,其具有更高的颜色纯度和光致发光量子产率。 )。然而,由于其固有的离子性质,PQD 在响应外部刺激(水分、热量等)时表现出较差的结构稳定性。本综述介绍了提高 PQD 结构稳定性的最新研究趋势和见解。此外,还讨论了 PQD 结构稳定性差的根源以及克服这一缺点的各种方法。PQD的结构降解主要由两种机制引起:(1)配体解离(即弱结合配体从PQD表面脱离)在PQD表面形成缺陷,(2)卤化物迁移形成空位由于卤化物离子的低迁移能,PQD 的晶格中存在大量的缺陷。PQD的结构稳定性可以通过四种方法来提高:(1)配体修饰,(2)核壳结构,(3)交联,(4)金属掺杂,所有这些方法都在本文中详细介绍。本综述提供了对 PQD 的结构稳定性和光电特性的全面了解,预计将有助于未来提高钙钛矿量子点 LED (PeLED) 器件性能的研究。
更新日期:2024-01-28
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