Crystalline and morphological defects in the perovskite film affect the operation of light-emitting devices. Thus, advanced and scalable fabrication techniques can improve device properties. In this work, we use slot-die coating at ambient conditions, followed by hot air drying, to produce CsPbBr light-emitting electrochemical cells. We compare this method to spin-coating and analyze film morphology and optical properties. We reveal that annealing the film on a hot plate increases PLQY and Shockley-Read-Hole lifetime, but worsens film morphology. In contrast, hot air drying during deposition improves morphology but reduces photoluminescence. The slot-die coating shows better results for device fabrication. With InGa and Al top electrodes, we achieve luminance 8100 cd m and 2900 cd m at a 5 V bias, respectively.

中文翻译：

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用于发光电化学电池的 CsPbBr3 纳米粒子薄膜的形态和结构缺陷优化

钙钛矿薄膜中的晶体和形态缺陷影响发光器件的运行。因此，先进且可扩展的制造技术可以改善器件性能。在这项工作中，我们在环境条件下使用槽模涂布，然后进行热风干燥，来生产 CsPbBr 发光电化学电池。我们将该方法与旋涂进行比较并分析薄膜形态和光学性能。我们发现，在热板上对薄膜进行退火会增加 PLQY 和肖克利读孔寿命，但会使薄膜形态恶化。相比之下，沉积过程中的热空气干燥改善了形态，但降低了光致发光。狭缝模头涂层在器件制造方面显示出更好的结果。使用 InGa 和 Al 顶部电极，我们在 5 V 偏压下分别实现了 8100 cd m 和 2900 cd m 的亮度。