At present, the large number of inherent Cu_Zn anti-site defects and harmful [2Cu_Zn+Sn_Zn] defect clusters in the CZTSe film layer limit the further progress of device efficiency. In this paper, Ag and Ge double cations were introduced into the CZTSe film layer, and (CuAg)₂ZnSnGeSe₄ (CAZTGSe) films were synthesized successfully by the sol-gel method to cut down the above defects and defect clusters to obtain high-efficiency devices. The influences of double cation substitution on CZTSe by partly replacing Cu with Ag, and Sn with Ge were developed. The role of Ag, Ge, and Ag+Ge substitution was researched by X-Ray Diffraction (XRD), scanning electron microscopy (SEM), current density-voltage (J-V), and external quantum efficiency (EQE) measurements. By incorporating at 5% Ag and at 20% Ge double cations into the CZTSe film, the device demonstrated the highest efficiency of 10.12%.In addition, the open circuit voltage (V_OC) of 503.57 mV, the short circuit current density (J_SC) of 31.36 mA/cm², and the fill factor (FF) of 64.1% were obtained.

目前， CZTSe膜层中大量固有的Cu _Zn反位缺陷和有害的[2Cu _Zn +Sn _{Zn ]缺陷簇限制了器件效率的进一步进步。}本文在CZTSe膜层中引入Ag、Ge双阳离子，采用溶胶-凝胶法成功合成了(CuAg) ₂ ZnSnGeSe ₄ (CAZTGSe)薄膜，减少了上述缺陷和缺陷簇，获得了高效率装置。研究了用 Ag 部分取代 Cu 和用 Ge 部分取代 Sn 的双阳离子取代对 CZTSe 的影响。通过 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、电流密度-电压 (JV) 和外量子效率 (EQE) 测量研究了 Ag、Ge 和 Ag+Ge 替代的作用。通过在CZTSe薄膜中掺入5% Ag和20% Ge双阳离子，该器件表现出最高10.12%的效率。此外，开路电压（V _OC）为503.57 mV，短路电流密度（J获得31.36mA/cm ^2的_{SC )和64.1%的填充因子(FF)。}